Goh1-Xxb Hall Effect Current Sensor (Compatible with LEM Hlsr)

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Injection
• Material: Plastic
• Application: Solar
• Certification: CE , UL
• Model NO.: GOH1-XXB
• Customized: Non-Customized
• Transport Package: Tube
• Trademark: GAUSS-ELEC
• Origin: China
• HS Code: 8504909090
• Production Capacity: 5000000 Pieces/Yeas

Product Description

GOH1-XXB Series Current Transducer

I_PN = 10 ... 50 A

Ref:GOH1-10B, GOH1-16B, GOH1-20B, GOH1-32B, GOH1-40B, GOH1-50B

 

Introduction

 

The GOH1-xxB series is based on Hall technology and open -loop design. It is suitable for DC, AC, pulsed and any kind of irregular current measurement under the isolated conditions.


Dimensions (in mm)

Parameter	Symbol	Unit	Specification			Conditions
			Min	Typical	Max
Primary nominal RMS current	IPN	A	±10A, ±16 A, ±20 A, ± 32 A, ±40 A, ±50 A,±120A
Primary current, measuring range	IPM	A	2.5X IPN			For UC>4.6V
Resistance of primary jumper @ TA=25ºC	RP	mΩ		0.21		T=25ºC
Supply voltage	UC	V	4.5	5	5.5
Reference voltage(output)	Vref	V	2.49	2.5	2.51	internal reference
Output voltage range @ IPM	Vout-Vref	V	-2		2
Electrical offset voltage @ IP=0	VOE	mV	-5		5	25ºC ,Vout-Vref
Temperature coefficient of Vref	TCVref	ppm/K	-170		170	-40ºC~105ºC
Temperature drift of VOE	VOE_TRange	mV	-5		5	-40ºC~105ºC
Sensitivity error	εG	%	-0.5		0.5	Factory adjustment
Temperature coefficient of G	TCG	ppm/K	-170		170	-40ºC~105ºC
Linearity error 0…IPN	εL	% of IPN	-0.5		0.5
Magnetic offset voltage(@10*IPN) referred to primary	UOM	mV	-2.5		2.5
Output RMS noise voltage	UN	mVP-P		25
		mVRMS		2.5
Reaction time @ 10% of IPN	tra	us		1.4	2	@50A/us
Step response time to 90% of IPN	tr	us		1.8	2.5	@50A/us
Frequency bandwidth (-3dB)	BW	kHz		250
Accuracy @IPN	X	% of IPN	-1		1
Accuracy @IPN @ TA	XTA	% of IPN	-2.5		2.5