Goh1-32b Hall Effect Current Sensor (Compatible with LEM Hlsr)

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Injection
• Material: Plastic
• Application: Solar
• Certification: CE , UL
• Model NO.: GOH1-32B
• Customized: Non-Customized
• Transport Package: Tube
• Trademark: GAUSS-ELEC
• Origin: China
• HS Code: 8504909090
• Production Capacity: 5000000 Pieces/Yeas

Product Description

GOH1-XXB Series Current Transducer

I_PN = 10 ... 50 A

Ref:GOH1-10B, GOH1-16B, GOH1-20B, GOH1-32B, GOH1-40B, GOH1-50B

 

Introduction

 

The GOH1-xxB series is based on Hall technology and open -loop design. It is suitable for DC, AC, pulsed and any kind of irregular current measurement under the isolated conditions.


Dimensions (in mm)

 

GOH1-32B
 

Parameter	Symbol	Unit	Specification			Conditions
			Min	Typical	Max
Primary nominal RMS current	IPN	A	-32		32
Primary current, measuring range	IPM	A	-80		80	For UC > 4.6V
Number of primary turns	NP	-		1
Resistance of primary jumper @TA =25ºC	RP	mΩ		0.21		T=25ºC
Resistance of primary jumper @TA =105ºC	RP	mΩ		0.29		T jumper=120ºC
Supply voltage	UC	V	4.5	5	5.5
Current consumption	IC	mA		12	18
Reference voltage (output)	Uref	V	2.49	2.5	2.51	internal reference
Output voltage range @IPM	Uout - Uref	V	-2		2
Vout output resistance	Rout	Ω		10
Vref output resistance	Rref	Ω		5
Load capacitance	CL	nF			6
Electrical offset voltage referred to primary@ IP=0	UOE	mV	-5		5	25ºC,Uout - Uref
Electrical offset current referred to primary	IOE	mA	-200		200
Temperature coefficient of Uref	TCVref	ppm/K	-170		170	-40ºC~105ºC
Temperature coefficient of UOE	UOE - TRange	mV	-5		5	-40ºC~105ºC
Temperature coefficient of G	TCG	ppm/K	-170		170	-40ºC~105ºC
Theoretical sensitivity	Gth	mV/A		25		800mV@IPN
Sensitivity error	εG	%	-0.5		0.5	Factory adjustment
Linearity error 0…IPN	εL	% of IPN	-0.5		0.5
Linearity error 0…IPM	εL	% of IPM	-0.5		0.5
Magnetic offset current(@10*IPN) referred to primary	IOM	mA	-100		100
Magnetic offset voltage(@10*IPN) referred to primary	UOM	mV	-2.5		2.5
Output RMS noise voltage DC.....20MHz	UN	mVP-P		35
		mVRMS		4.4
Reaction time @ 10% of IPN	tra	us		1.4	2	@50A/us
Step response time to 90% of IPN	tr	us		1.8	2.5	@50A/us
Frequency bandwidth(-3dB)	BW	kHz		250
Accuracy @IPN	XTA	% of IPN	-1		1
Accuracy @IPN@TA	TA	% of IPN	-2.5		2.5